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| RDX120N50 Transistors 10V Drive Nch MOS FET RDX120N50 Structure Silicon N-channel MOS FET External dimensions (Unit : mm) TO-220FM 10.0 3.2 4.5 2.8 14.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity. (1)Gate 15.0 12.0 8.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 Applications Switching (2)Drain (3)Source Packaging specifications Package Type RDX120N50 Code Basic ordering unit (pieces) Bulk - 500 Inner circuit 1 2 (1) (2) (3) 1 GATE PROTECTION DIODE 2 BODY DIODE (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID 1 IDP 2 IS ISP 2 IAS 3 EAS 4 PD Tch Tstg Limits 500 30 12 48 12 48 12 260 45 150 -55 to +150 Unit V V A A A A A mJ W C C Avalanche current Avalanche energy Total power dissipation (Tc=25C) Channel temperature Range of storage temperature 1 Limited only by maximum temperature allowed 2 Pw 10s, Duty cycle 1% 4 L = 3.1mH VDD=90V Rg=25 startingTch=25C 3 L = 3.1mH VDD=90V Rg=25 Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 2.78 Unit C/W 1/2 RDX120N50 Transistors Electrical characteristics (Ta=25C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Static drain-source on-state RDS (on) resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Min. - 500 - 2.0 - 5.0 - - - - - - - - - - Typ. - - - - 0.38 8.0 1600 200 35 25 17 80 44 45 8 15 Max. 10 - 25 4.0 0.5 - - - - - - - - - - - Unit A V A V S pF pF pF ns ns ns ns nC nC nC Conditions VGS= 25V, VDS=0V ID= 1mA, VGS=0V VDS= 500V, VGS=0V VDS= 10V, ID= 1mA ID= 6A, VGS= 10V VDS= 10V, ID= 6A VDS= 25V VGS=0V f=1MHz VDD 150V ID= 6A VGS= 10V RL= 25 RG=10 VDD 250V VGS= 10V ID= 12A Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Forward voltage Reverse recovery time Reverse recovery charge Pulsed VSD trr Qrr Min. - - - Typ. - 550 4.7 Max. 1.5 - - Unit V ns C Conditions IS= 12A, VGS=0V IDR= 12A, VGS=0V di/dt= 100A / s 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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